Mask pattern transfer method, mask pattern transfer apparatus using the method, and device manufacturing method
US6559463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2000 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Feb 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31766
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.