Semiconductor device tester and semiconductor device test method
US6559662B1 · kind B1 · utility
25Cited by
9References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2000 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Nov 27, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A plurality of measuring positions on a sample are sequentially irradiated with electron beams having identical cross sectional shapes, currents produced in the sample when the individual measuring positions are irradiated with electron beams are measured and the measured currents or physical amounts derived from the measured currents are displayed on a two-dimensional plane as a function of measuring position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.