Barrier layer structure for copper metallization and method of forming the structure
US6562715B1 · kind B1 · utility
60Cited by
55References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 9, 2000 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.