Integration of silicon etch and chamber cleaning processes
US6566270B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Sep 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate disposed in a substrate process chamber having a source power includes transferring the substrate into the substrate process chamber. A trench is etched on the substrate by exposing the substrate to a plasma formed from a first etchant gas by applying RF energy from the source power system and biasing the plasma toward the substrate. Byproducts adhering to inner surfaces of the substrate process chamber are removed by igniting a plasma formed from a second etchant gas including a halogen source in the substrate process chamber without applying bias power or applying minimal bias power. Thereafter, the substrate is removed from the chamber. At least 100 more substrates are processed with the etching-a-trench step and removing-etch-byproducts step before performing a dry clean or wet clean operation on the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.