Field effect transistor with an improved gate contact and method of fabricating the same

US6566718B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Karsten Wieczorek · Dresden, DE
• Rolf Stephan · Dresden, DE
• Manfred Horstmann · Dresden, DE
• Stephan Kruegel · Sankt Goar, DE

Key dates

• Filing date: May 3, 2001
• Grant date: May 20, 2003
• Expiry date: May 3, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A field effect transistor comprises a gate electrode contact of a highly conductive material that contacts the gate electrode and extends in the transistor width dimension at least along a portion of the channel. Thus, the gate resistance and the gate signal propagation time for a voltage applied to the gate contact is significantly reduced even for devices with an extremely down scaled gate length. Moreover, a method for fabricating the above FET is disclosed.