Inventor · Dresden, DE

Rolf Stephan

38Patents
9h-index
28Co-inventors
71Inventor score

Filing activity: Apr 25, 2000 → Oct 18, 2012

Most-cited inventions

PatentTitleAreaCited byStatus
US6881641B2 Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same Electricity 125 Expired
US7297994B2 Semiconductor device having a retrograde dopant profile in a channel region Electricity 118 Active
US6306698A Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making same Electricity 29 Expired
US6566718B2 Field effect transistor with an improved gate contact and method of fabricating the same Electricity 26 Expired
US6268257A Method of forming a transistor having a low-resistance gate electrode Electricity 24 Expired
US7608499B2 Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same Electricity 19 Active
US7325224B2 Method and system for increasing product yield by controlling lithography on the basis of electrical speed data Physics 13 Expired
US6620718B1 Method of forming metal silicide regions on a gate electrode and on the source/drain regions of a semiconductor device Electricity 13 Expired
US6423634B1 Method of forming low resistance metal silicide region on a gate electrode of a transistor Electricity 10 Expired
US7217657B2 Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device Electricity 9 Expired
US6593197B2 Sidewall spacer based fet alignment technology Electricity 7 Expired
US8796807B2 Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials Electricity 7 Active
US6846708B2 Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device Electricity 6 Expired
US6798028B2 Field effect transistor with reduced gate delay and method of fabricating the same Electricity 6 Expired
US7238578B2 Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions Electricity 5 Expired
US6673665B2 Semiconductor device having increased metal silicide portions and method of forming the semiconductor Electricity 5 Expired
US8846513B2 Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill Electricity 5 Active
US8735236B2 High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology Electricity 5 Active
US8119461B2 Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment Electricity 4 Active
US7226859B2 Method of forming different silicide portions on different silicon-containing regions in a semiconductor device Electricity 3 Expired
US6492210B2 Method for fully self-aligned FET technology Electricity 3 Expired
US7605045B2 Field effect transistors and methods for fabricating the same Electricity 3 Active
US6770552B2 Method of forming a semiconductor device having T-shaped gate structure Electricity 3 Expired
US7115464B2 Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device Electricity 2 Expired
US8871586B2 Methods of reducing material loss in isolation structures by introducing inert atoms into oxide hard mask layer used in growing channel semiconductor material Emerging Cross-Sectional Technologies 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.