Gas-driven rotation apparatus and method for forming silicon carbide layers
US6569250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2001 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | May 1, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas driven rotation apparatus includes a base member and a platter. The base member includes an upper surface and a mounting portion formed in the upper surface. The mounting portion includes an inner recess and an annular outer channel surrounding and spaced apart from the inner recess. A plurality of drive channels extend generally radially outwardly from the inner recess to the outer channel. The drive channels are substantially straight. A drive gas entrance passage extends through the base member and has an entrance opening in the inner recess. A drive gas exhaust passage extends through the base member and has an exhaust opening in the outer channel. The platter overlies the mounting portion. The drive channels are arranged and configured such that, when a drive gas flows through the drive channels, the drive gas causes the platter to rotate relative to the base member about an axis of rotation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.