Slurry-less chemical-mechanical polishing
US6569769B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 31, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Oct 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides slurry-less chemical-mechanical polishing processes which are effective in planarizing oxide materials, especially siliceous oxides, even where the starting oxide layer has significant topographical variation. The processes of the invention are preferably characterized by the use of a fixed abrasive polishing element and by use of an aqueous liquid medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide material on the substrate. The method reduces or eliminates the transfer of topographic variations to levels below the desired planarization level. The processes enable elimination of special endpoint detection techniques. The processes are also especially suitable for polishing interlevel dielectrics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.