Method for enhancing plasma processing performance
US6569775B1 · kind B1 · utility
11Cited by
18References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2000 |
| Grant date | May 27, 2003 |
| Priority date | — |
| Expiry date | Feb 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps of etching an aluminum layer and, during the etching, exposing the semiconductor wafer containing the aluminum layer to photons that photodesorb copper chloride from the surface of the layer thus improving the etch process performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.