Apparatus and method of thermal processing and method of pattern formation
US6573031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Dec 18, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed. The two-time thermal-process or solvent-density control promotes evaporation of the resist solvent while restricting scattering of a photo-oxidizing agent included in the resist from being promoted beyond…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.