Memory device and method for sensing while programming a non-volatile memory cell
US6574145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Jun 3, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The preferred embodiments described herein provide a memory device and method for sensing while programming a non-volatile memory cell. In one preferred embodiment, a memory device is provided with a memory cell and a detection circuit. While the memory cell is being programmed, the detection circuit determines whether the memory cell is in a programmed state. If the memory cell is in a programmed state, the programming of the memory cell is terminated. As compared with prior programming approaches, this preferred embodiment reduces programming time and power while increasing programming bandwidth (the number of memory cells that can be programmed per unit time). In another preferred embodiment, a plurality of memory cells along a wordline are programmed simultaneously. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.