Apparatus and method for use in manufacturing a semiconductor device
US6576063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jan 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.