Sidewall polymer forming gas additives for etching processes
US6583065B1 · kind B1 · utility
65Cited by
26References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1999 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of reducing critical dimension (CD) microloading in dense and isolated regions of etched features of silicon-containing material on a substrate uses a plasma of an etchant gas and an additive gas. In one version, the etchant gas comprises halogen species absent fluorine, and the additive gas comprises fluorine species and carbon species, or hydrogen species and carbon species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.