Ultrasonic spray coating of liquid precursor for low K dielectric coatings
US6583071B1 · kind B1 · utility
83Cited by
47References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 18, 2000 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a extremely low dielectric constant film over a substrate. The process includes coating a substrate with a solution comprising a soluble source of silicon oxide, water, a solvent, a surfactant and a catalyst using an ultrasonic spray nozzle. The coated substrate is then subsequently treated to harden the solution into an extremely low dielectric constant film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.