Substrate support tolerant to thermal expansion stresses
US6583980B1 · kind B1 · utility
26Cited by
17References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2000 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chamber 30 for processing a substrate 25 comprises a support 55 including an electrode 70 at least partially covered by a dielectric 60 that is permeable to electromagnetic energy. The electrode 70 may be chargeable to electrostatically hold the substrate 25, to couple energy to a gas in the chamber 30, or both. A base 90 below the support 55 comprises a slot 95 that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.