Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric
US6586808B1 · kind B1 · utility
54Cited by
28References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2002 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Jun 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET and methods of fabrication. The MOSFET includes a gate having a center gate electrode portion being spaced from the layer of semiconductor material by a center gate dielectric. The gate also includes a lateral gate electrode portion adjacent each sidewall of the center gate electrode portion. The lateral gate electrode portions are each spaced from the layer of semiconductor material by a lateral gate dielectric portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.