Pasting method for eliminating flaking during nitride sputtering
US6589398B1 · kind B1 · utility
11Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2002 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Mar 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention pertains to methods for preventing metal or metal-derived material from flaking during sputter processing of substrates. Methods of the invention are particularly useful for non-planar sputter targets. The magnetic field configuration in a sputter apparatus is modulated during a pasting process. Flaking from regions of the target, shield, or other internal components of the sputter apparatus is inhibited by pasting methods which include encapsulation and optionally removal of material, for example by erosion via high density plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.