Group III nitride compound semiconductor device and producing method thereof
US6593016B1 · kind B1 · utility
20Cited by
7References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jan 9, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 &mgr;m and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 &mgr;m is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.