Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
US6593152B2 · kind B2 · utility
56Cited by
8References
60Claims
0Family size
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Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Nov 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.