Patent · US Expired

Method of controlling a shape of an oxide layer formed on a substrate

US6593175B2 · kind B2 · utility

9Cited by

10References

26Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Thomas Feudel · Radebeul, DE
Manfred Horstmann · Dresden, DE
Christian Krüger · Stuttgart, DE

Key dates

Filing date	Mar 14, 2001
Grant date	Jul 15, 2003
Priority date	—
Expiry date	Mar 14, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming an oxide layer on a substrate comprises deposition of a mask layer with an opening for defining the area where the oxide layer is to be formed, and an ion implantation step performed with a tilt angle so as to obtain a varying ion concentration. In a subsequent single oxidation step, an oxide layer is formed having a thickness that varies in conformity with the ion concentration. This method may advantageously be applied to the formation of a gate insulation layer in a field effect transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.