Power mosfet with integrated drivers in a common package
US6593622B2 · kind B2 · utility
59Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | May 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.