Method and apparatus for processing semiconductor substrates with hydroxyl radicals
US6596343B1 · kind B1 · utility
4Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Apr 21, 2000 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Apr 21, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.