System to determine suitability of sion arc surface for DUV resist patterning
US6597463B1 · kind B1 · utility
18Cited by
12References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2001 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Jun 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system and method are disclosed for providing in-situ monitoring of an oxidized ARC layer disposed over an ARC layer. By monitoring the thickness of the oxidized portion of the ARC layer during semiconductor processing, one or more process control parameters may be adjusted to help achieve a desired oxidized portion thickness. As a result, the number of process steps required to achieve the desired oxidized portion thickness may be reduced, providing a more efficient and economical process
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.