Chemical mechanical polishing of a metal layer with polishing rate monitoring
US6602724B2 · kind B2 · utility
57Cited by
55References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Jul 27, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B7/105
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.