Method of annealing large area glass substrates
US6610374B2 · kind B2 · utility
9Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Sep 10, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.