Locally increasing sidewall density by ion implantation

US6610594B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Eric M. Apelgren · Austin, US
• Christian Zistl · Dresden, DE
• Jeremy I. Martin · Austin, US
• Paul R. Besser · Sunnyvale, US
• Fred Cheung · San Jose, US

Key dates

• Filing date: Jul 10, 2001
• Grant date: Aug 26, 2003
• Expiry date: Jul 10, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is provided, the method comprising forming a first conductive structure, and forming a first dielectric layer above the first conductive structure. The method also comprises forming a first opening in the first dielectric layer above at least a portion of the first conductive structure, the first opening having sidewalls, and densifying the sidewalls.