Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6613442B2 · kind B2 · utility
32Cited by
40References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2000 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Jan 24, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.