Substrate processing method and apparatus
US6613692B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Dec 10, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.