Surface preparation prior to deposition
US6613695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Aug 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material. Preferably less than 10 å of the bulk material incorporates the excited species, which can include fluorine, chlorine and particularly nitrogen excited species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.