Christophe Pomarede
20Patents
10h-index
22Co-inventors
71Inventor score
Filing activity: Aug 31, 2001 → Dec 11, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7297641B2 | Method to form ultra high quality silicon-containing compound layers | Electricity | 593 | Expired |
| US6613695B2 | Surface preparation prior to deposition | Electricity | 220 | Expired |
| US7294582B2 | Low temperature silicon compound deposition | Electricity | 97 | Expired |
| US7651953B2 | Method to form ultra high quality silicon-containing compound layers | Electricity | 75 | Active |
| US7964513B2 | Method to form ultra high quality silicon-containing compound layers | Electricity | 72 | Active |
| US6960537B2 | Incorporation of nitrogen into high k dielectric film | Emerging Cross-Sectional Technologies | 41 | Expired |
| US7026219B2 | Integration of high k gate dielectric | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6806145B2 | Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer | Electricity | 25 | Expired |
| US6958277B2 | Surface preparation prior to deposition | Electricity | 19 | Expired |
| US7022613B2 | Reduced cross-contamination between chambers in a semiconductor processing tool | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7056835B2 | Surface preparation prior to deposition | Electricity | 9 | Expired |
| US7629270B2 | Remote plasma activated nitridation | Electricity | 9 | Active |
| US6825051B2 | Plasma etch resistant coating and process | Electricity | 7 | Expired |
| US9238865B2 | Multiple vapor sources for vapor deposition | Electricity | 6 | Active |
| US6797617B2 | Reduced cross-contamination between chambers in a semiconductor processing tool | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7405453B2 | Incorporation of nitrogen into high k dielectric film | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7476627B2 | Surface preparation prior to deposition | Electricity | 4 | Active |
| US7569284B2 | Incorporation of nitrogen into high k dielectric film | Emerging Cross-Sectional Technologies | 3 | Active |
| US9873942B2 | Methods of vapor deposition with multiple vapor sources | Electricity | 3 | Active |
| US7790556B2 | Integration of high k gate dielectric | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.