Lower temperature method for forming high quality silicon-nitrogen dielectrics
US6613698B2 · kind B2 · utility
1Cited by
18References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Aug 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.