Nonvolatile semiconductor memory cell and method for fabricating the memory cell

US6614069B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Rosner · Hersbruck, DE
• Thomas Schulz · Austin, US
• Lothar Risch · Neubiberg, DE
• Ties Ramcke · Hersbruck, DE

Key dates

• Filing date: Jan 22, 2002
• Grant date: Sep 2, 2003
• Expiry date: Jan 22, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/688
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A nonvolatile semiconductor memory cell includes a transistor component formed on a substrate and a storage node that determines the switching state of the transistor component. The storage node is arranged near a control gate electrode. The storage node has a group of vertically oriented column structures having at least two semiconductor layer zones and an insulating layer zone situated between the two semiconductor layer zones.