Method for controlling etch uniformity
US6617794B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Dec 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply. The method may further include controlling plasma uniformity in a semiconductor processing chamber, wherein the control process includes positioning a first coil above the processing chamber, the first coil being concentrically positioned about a vertical axis of the processing chamber, and positioning a second coil above the processing chamber, the second coil being concentrically positioned about the vertical axis of the processing chamber and radially outward from the first coil. The control process may further include supplying electrical power to the first and second coils with a single power distribution networ…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.