Method of programming a non-volatile memory cell using a baking process
US6618290B1 · kind B1 · utility
70Cited by
13References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 13, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0475
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming that includes programming a fresh memory cell with a substrate that includes a first region and a second region with a channel therebetween and a gate above the channel, and a charge trapping region that contains a first amount of charge. Baking the programmed fresh cell causing a charge loss in the channel while the remaining charge within the channel is distributed more locally at the first region when compared to the distribution of charge prior to the baking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.