Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system
US6620289B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1999 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jan 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for processing a workpiece in a chamber by providing an asymmetric flow of process gas and processing the workpiece with the process gas. The asymmetric flow counteracts a non-uniform distribution of reactive species in the chamber. The asymmetric flow can be accomplished by introducing the process gas through a plurality of gas nozzles that communicate through a side wall of the chamber proximate a pump port while pumping gas with a pump coupled to the pump port. The inventive method can be used with a conventional processing chamber by only opening the gas nozzles closest to the pump and blocking any other gas nozzles. Alternatively, the method can be implemented in a processing chamber having gas nozzles located only proximate the pump port.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.