Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same
US6623656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2001 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Apr 16, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.