Method for manufacturing group III nitride compound semiconductor device
US6623998B2 · kind B2 · utility
14Cited by
11References
74Claims
0Family size
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Key dates
| Filing date | Nov 26, 2002 |
| Grant date | Sep 23, 2003 |
| Priority date | — |
| Expiry date | Nov 26, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the group III nitride semiconductor layer, the undercoat layer having a surface of a peak and trough structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.