Semiconductor-on-insulator (SOI) substrate having selective dopant implant in insulator layer and method of fabricating

US6624476B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Simon S. Chan · Saratoga, US
• Matthew S. Buynoski · Palo Alto, US
• Qi Xiang · San Jose, US

Key dates

• Filing date: Apr 29, 2002
• Grant date: Sep 23, 2003
• Expiry date: Apr 29, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A semiconductor-on-insulator (SOI) device includes a buried insulator layer and an overlying semiconductor layer. Portions of the insulator layer are doped with the same dopant material, for example boron, as is in corresponding portions of the overlying surface semiconductor layer. A peak concentration of the dopant material may be located in the insulator material, or may be located in a lower portion of the surface semiconductor layer. The dopant material in the insulator layer may prevent depletion of dopant material from portions of the surface semiconductor layer, such as from channel portions of NMOS transistors.