Method for stabilizing the internal surface of a PECVD process chamber
US6626186B1 · kind B1 · utility
7Cited by
0References
5Claims
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Key dates
| Filing date | Nov 16, 2000 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | Nov 16, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus and method of processing a substrate comprises positioning a substrate within a processing space of a processing chamber, and depositing a material layer, such as a titanium-containing layer, onto the substrate using plasma-enhanced chemical vapor deposition. The substrate is then removed from the processing chamber and the processing space is purged. A gas mixture containing oxygen is then introduced into the processing space and the gas mixture is excited with RF energy to form an oxygen-containing plasma. The oxygen-containing plasma is sustained for a predetermined amount of time in the processing space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.