Apparatus and method for observing sample using electron beam
US6627889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2002 |
| Grant date | Sep 30, 2003 |
| Priority date | — |
| Expiry date | May 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for observing a sample that is capable of making observations by irradiating an electron beam to a sample in the form of a thin film, and making elemental analysis accurately and with increased resolution while reducing background noise. A particular portion of the sample is observed by the electron beam by disposing a light element piece having a hole provided immediately behind the thin film sample. According to the present invention, it is possible to reduce the x-rays generated from portions other than the sample and electron beam incident on the sample after being scattered to portions other than the sample when observing the thin film sample by irradiating the electron beam. It is therefore possible to make secondary electron observation and elemental analysis with increased accuracy and sensitivity. Thus, an apparatus and a method for observing samples is provided that allows for the accurate and high-resolution internal observation of LSI devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.