Patent · US Expired

Flash memory cell and method to achieve multiple bits per cell

US6628544B2 · kind B2 · utility

21Cited by

25References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Danny Pak-Chum Shum · Poughkeepsie, US
Georg Tempel · Zorneding, DE
Christoph Ludwig · Radeberg, DE

Key dates

Filing date	Jan 25, 2002
Grant date	Sep 30, 2003
Priority date	—
Expiry date	Jan 25, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/565
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method of flash memory cell programming is provided which uses a uniform electric potential across tunnel oxide. The tight Vt distribution and very stable Vt shift over program/erase cycling allows for a multi-level cell capable of having more than 2 bits per cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.