Generating mask layout data for simulation of lithographic processes

US6631511B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Henning Haffner · Pawling, US
• Armin Semmler · Munich, DE
• Christoph Friedrich · Hersbruck, DE

Key dates

• Filing date: Sep 7, 2001
• Grant date: Oct 7, 2003
• Expiry date: Sep 7, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/705
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for generating mask layout data for lithography simulation includes prescribing original data defining an original layout of a mask and determining a deviation between the original layout and a subsequent layout of a mask derived from said original layout. On the basis of this deviation, new data defining a new layout is calculated. This new layout is more similar to the subsequent layout that it is to the original layout.