Indium gallium nitride smoothing structures for III-nitride devices
US6635904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.