Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof
US6635964B2 · kind B2 · utility
23Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2001 |
| Grant date | Oct 21, 2003 |
| Priority date | — |
| Expiry date | Aug 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to a metallization structure on a fluorine-containing dielectric. This metallization structure includes a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt, and Pd. The barrier layer includes at least a first part, being positioned between the fluorine-containing dielectric and the conductive pattern, the first part containing at least a first and a second sub-layer, the first sub-layer contacting the fluorine-containing dielectric being impermeable for fluorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.