Multi-layer ceramic electrostatic chuck with integrated channel
US6639783B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1998 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Sep 8, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer support chuck having small diameter gas distribution ports for heat transfer gas. The diameter ports inhibit plasma ignition in heat transfer gas distribution channels. The ports are less than 20 mils in diameter less than 3 mm in length. The short length of the ports facilitates fabrication of multiple ports of very small diameter. The ports communicate with a gas distribution plenum integrated into the body of the chuck beneath a wafer support surface. The plenum has radial channels and a peripheral groove for distributing heat transfer gas to the wafer support surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.