Bipolar transistor manufacturing
US6642096B2 · kind B2 · utility
3Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2001 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Sep 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A method of manufacturing a bipolar transistor in a single-crystal silicon substrate of a first conductivity type, including a step of carbon implantation at the substrate surface followed by an anneal step, before forming, by epitaxy, the transistor base in the form of a single-crystal semiconductor multilayer including at least a lower layer, a heavily-doped median layer of the second conductivity type, and an upper layer that contacts a heavily-doped emitter of the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.