Patent · US Expired

Process for producing a capacitor configuration

US6645809B2 · kind B2 · utility

0Cited by

2References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Heinz Honigschmid · Starnberg, DE
Thomas Rohr · Aschheim, DE

Key dates

Filing date	Nov 27, 2001
Grant date	Nov 11, 2003
Priority date	—
Expiry date	Nov 27, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/30
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In order to provide a particularly space-saving capacitor configuration in a memory device, a plurality of second electrode regions which are not in direct electrical contact with one another are formed on areas of a first electrode region covered by a dielectric material. During operation of the capacitor configuration, portions of the first electrode region form bottom electrodes which are connected by a connecting region, so that an additional connecting device for the bottom electrodes is not necessary.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.