Selective absorption process for forming an activated doped region in a semiconductor
US6645838B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2002 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Apr 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for activating a doped region (80) or amorphized doped region (34) in a semiconductor substrate (10). The process includes the steps of doping a region of the semiconductor substrate, wherein the region is crystalline or previously amorphized. The next step is forming a conformal layer (40) atop the upper surface (11) of the substrate. The next step is performing at least one of front-side and backside irradiation of the substrate to activate the doped region. The activation may be achieved by heating the doped region to just below the melting point of the doped region, or by melting the doped region but not the crystalline substrate. An alternative process includes the additional step of forming the doped region (amorphized or unamorphized) within or adjacent a deep dopant region (60) and providing sufficient heat to the deep dopant region through at least one of front-side and backside irradiation so that the doped region is activated through explosive recrystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.