Method of forming a silicon nitride layer on a substrate

US6645884B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Michael Yang · Fremont, US
• Chien-Teh Kao · Sunnyvale, US
• Karl A. Littau · Palo Alto, US
• Steven Chen · Fremont, US
• Henry Ho · Tokyo, JP
• Ying Yu · Cupertino, US

Key dates

• Filing date: Jul 9, 1999
• Grant date: Nov 11, 2003
• Expiry date: Jul 9, 2019

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/345
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.