Method for manufacturing a semiconductor component

US6649459B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Wolfgang Friza · Villach, AT
• Oliver Häberlen · Villach, AT
• Michael Rüb · Faak am See, AT
• Helmut Strack · Hersbruck, DE

Key dates

• Filing date: Mar 26, 2001
• Grant date: Nov 18, 2003
• Expiry date: Mar 26, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.